| PART |
Description |
Maker |
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| FDC855N |
30V Single N-Channel, Logic Level, PowerTrench MOSFET; Package: SSOT-6; No of Pins: 6; Container: Tape & Reel 6100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA
Single N-Channel, Logic Level, PowerTrench㈢ MOSFET 30V, 6.1A, 27mヘ
Single N-Channel, Logic Level, PowerTrench? MOSFET 30V, 6.1A, 27mΩ
|
Fairchild Semiconductor, Corp.
|
| BUK9Y59-60E BUK9Y59-60E-15 |
N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|
| FDP7030BL FDB7030BL FDP7030 FDB7030BLNL |
N-Channel Logic Level PowerTrenchTM MOSFET
N-Channel Logic Level PowerTrench MOSFET 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FDB886010 FDB8860F085 FDB8860-F085 |
30V N-Channel Logic Level PowerTrenchMOSFET
N-Channel Logic Level PowerTrench? MOSFET 30V, 80A, 2.6m
|
Fairchild Semiconductor
|
| HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL HGT1S |
DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL
DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| PHU108NQ03LT PHU108NQ03LT127 PHB108NQ03LT PHD108NQ |
N-channel TrenchMOS logic level FET
75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, IPAK-3
N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
| PHP11N06LT PHB11N06LT PHD11N06LT PHB11N06LT118 |
10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, D2PAK-3
N-channel TrenchMOS TM transistor Logic level FET
N-channel TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHK24NQ04LT |
TrenchMOS logic level FET 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012
From old datasheet system
TrenchMOS (tm) logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| HUFA76407DK8T HUFA76407DK8 |
3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET 3800 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
3.5A/ 60V/ 0.105 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET
3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFETPower MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| PSMN010-55D |
N-channel logic level TrenchMOS(tm) transistor
N-channel logic level TrenchMOS TM transistor
N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips Semiconductors
NXP Semiconductors N.V.
|
|
